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Electron Microscopy Sciences

Technical Data Sheets

Cleaving Copper C4 Bumps with LatticeAx

EMS Catalog #7641

Copper Bumps After Cleave
Copper Bumps After Cleave

This sample was prepared by using a Multi-tool workflow.

The preparation yielded a high-quality cross section ready for SEM imaging.

After Step 1: SEM   SEM image showing direction on ion mill poilish
After Step 1: SEM   SEM image showing direction on ion mill poilish

The solder bumps were prepared for the SEM in a two-step process.

In Step 1, the LatticeAx™ cleaver was used to cleanly cross-section close to and parallel to a specific row of copper bumps. The copper bumps had a diameter of 85-µm and were cleaved 30-µm from the center of a bump.

The time to cleave was 5 minutes.

After Step 2: SEM after cleave and polish   SEM image through center of bump
After Step 2: SEM after cleave and polish   SEM image through center of bump

In Step 2, a broad, argon, ion-beam instrument, the Hitachi IM4000, was used to prepare the final imaging surface.

The sample was mounted topside down on a sample block to perform backside milling. Backside milling was used to prevent artifacts of ion beam milling that can occur as a result of sample topography. By cleaving close to the center of the copper bumps, the time on the ion mill was minimized. No further preparation was performed.

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Product Information

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