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Electron Microscopy Sciences

Material Science and Metrology

arrow13Plasma Cleaners, Plasma Etchers, Reactive Ion Etcher, Ion Beam Sputter

Plasma Cleanerarrow12Plasma Cleaner – Model PC2000

The PC2000 is designed to simultaneously clean the specimen and specimen stage, which minimizes, and in many cases, eliminates contamination of the specimen being analyzed. The specimen holder and specimen are subjected to reactive gas plasma prior to electron microscope analysis.

It has been well documented that low energy plasmas can be used to reactively etch or remove organic materials found on the surface of inorganic materials. This technology has been used by the industrial community to clean semiconductor wafers and optical materials for many years. A related technique is now being implemented in the field of electron microscopy, where specimens can become contaminated during the preparation process or from other sources. Current analytical instruments use tightly focused, intense beams that create carbon deposits on the specimen surface due to organic contamination.


Plasma cleaning with the Model PC2000 involves subjecting the specimen and/or specimen stage to a reactive gas plasma that efficiently removes organic contamination from the surfaces exposed in the plasma. The procedure may be carried out prior to inserting the specimen and specimen stage into the EM by either mounting the specimen holder in one of the supplied ports or by inserting the entire sample or sample assembly through the hinged upper port and into the 8”OD x 4” high chamber. The system can be used with any side entry TEM holders, top entry TEM holders, or with any sample that will fit inside the chamber. For most applications nominally pure argon followed by nominally pure oxygen is used for plasma cleaning. However, the PC2000 allows a variety of gas species to be used, allowing the user to tailor specific reactions for a given specimen material. Cleaning times are typically a matter of minutes, which generally allows specimens to be studied for several hours.

Control Panel

The PC2000 control panel allows the user to control and monitor every aspect of the plasma cleaning process directly from the front panel. The control panel integrates display and control of critical process related data with a straightforward and intuitive interface. Independent front panel controls for 2 gas inlets, forward power, tuning, RF Power and process time along with a DC bias display provide complete control over the entire process. While the RF, gas and vacuum controls are fully interlocked for user and lab safety, the system parameters can be easily changed from run to run or during a process run to optimize the desired effect. While complete control over every aspect of the process can be changed on the front panel, repetitive process runs can be easily duplicated using a simple 3 button sequence.

While the PC2000 offers all of the flexibility and functionality required in a research instrument, it does so with a thoughtfully designed interface that makes the system ideal for multi-user environments.

Special Features

  • Suitable for all side entry and top entry TEM holders. Large chamber also accommodates specimens up to 7" diameter and 3" high for cleaning tweezers, specimen mounts, etc.
  • Digital LCD displays, indicate forward power in watts, reflected power, DC bias and vacuum level.
  • Compatible with Argon, Oxygen, CF4, and other gas mixtures.
  • System comes standard with 3 ports which allow simultaneous cleaning of multiple holders or insertion of analytical tools into the plasma chamber.
  • Power level can be optimized for each specimen type and gas species to maximize cleaning rate without risk of etching the specimen stage or the chamber2.
  • Viewport allows easy monitoring of the process.
  • Safety interlocked controls simplify operation - ideal for multi-user environments.

Specimen Storage and Transfer

Once the samples have been cleaned, they can be inserted into a Vacuum Storage Container for transport to the microscope. The specimen holders can also be stored in these containers for an indefinite period preventing further contamination. The vacuum storage containers can also be mounted on the Vacuum Pumping Station manifold for evacuating multiple holders. Once evacuated, the containers can be maintained under vacuum or backfilled with dry nitrogen or other suitable gas while mounted on the Vacuum Pumping Station.

Plasma Trimming™

Plasma TrimmingTM is a technique by which material is removed from a TEM specimen by use of a moderate energy Ar plasma discharge. By using an Ar gas plasma, the sample can be thinned in a very slow and controlled manner. This allows further thinning of specimens that have been previously ion or FIB milled to remove surface damage, ion milling defects or surface artifacts5.

Vacuum Pump

The PC2000 uses a corrosive series 2-stage rotary vane pump charged with an inert vacuum fluid that is safe for use with oxygen, resistant to attack by corrosive gas species and has a low vapor pressure. Studies have shown that the proper use of a rotary pump combined with an inert vacuum fluid provides a safe and contamination free environment for plasma cleaning1.


1. Surface Science Aspects of Contamination in TEM Sample Preparation, J.T. Grant, S.D. Walck, F.J. Scheltons, A.A. Voevodin, Materials Research Society Vol. 480 1997.

2. Application of Reactive Gas Plasma Cleaning in Mitigating Contamination of Specimens During Transmission and Analytic Electron Microscopy, Shane P. Roberts, Scott D. Walck, John T. Grant, Nestor J. Zaluzec, Materials Research Society Vol. 480 1997.

3. Reactive Gas Plasma Specimen Processing for use in Microanalysis and Imaging in Analytical Electron Microscopy, Nestor J. Zaluzec, Bernard J. Kestel, David Henriks, Microscopy & Microanalysis 1997.

4. Simultaneous Specimen and Stage Cleaning for Analytical Electron Microscopy, David Henriks, Microscopy Today issue 96-8 October 1996 pgs. 16-17.

5. In-Situ Transformation of a Zinc TEM Lift-Out Specimen, B.I. Prentizer, S. Collins, and L.A. Giannuzzi


Control Panel

Readouts: Digital LCD displays for forward power in watts
Forward Power Control: 1-150 watts, adjustable
Reflected Power Control: Manually adjustable, 180 degree potentiometer
DC Bias: Digital LCD display
Electronics: Solid state, crystal controlled, 199kHz switchmode DC power converter to RF generator
Termination: Digital interlocked timer or manual termination
Interlocks: RF, gas and vacuum fully interlocked for user & lab safety.

Vacuum System

Mechanical Pump: Corrosive series 2-stage rotary vane pump
Base Pressure: 2x10-2 torr
Time to Reach Base Pressure: 30 seconds
Operating Pressure: User variable (200 millitorr typical)
Pump Access: Fully accessible, remote mount, KF-25 connection, all hoses & fittings provided
Activation: Front panel LED "ON" indicator
Vacuum Sensor/Readout: Capacitance manometer and digital LCD readout
Gas Delivery and Control: Dual independent needle valves with safety interlock solenoid
System Vacuum Vent: Independent solenoid interlocked with connection for dry nitrogen


Size: 8"OD x 4" high stainless steel electropolished cylinder with viewport
Electrode: Immersed stainless steel
Specimen Interface: "No Tools" quick connect for all side and top entry TEM holders. Top entry holders mounted through hinged top port.

System Specifications

System Weight: Less than 60 lbs. (without vacuum pump)
Dimension: 22"W x 14"D x 18"H
Power Requirements: 110/220 VAC single phase, 5 amps (at 120VAC)
Cooling: Water cooled
RF: 13.56 MHz frequency, 150 watts forward power
WARRANTY: [2] year Limited Warranty


55300 Plasma Cleaner- Model PC 2000 each 48,090.00 Add to Cart

Spare Parts and Accessories for PC 2000

55300-1 Specimen Stage Adapter for JEOL side entry holders (for 100CX) each 450.00 Add to Cart
55300-2 Specimen Stage adapter for JEOL side entry holders (1210,1220,1230,2010,2010F, 3010, 3000F & 4010) each 450.00 Add to Cart
55300-3 Specimen Stage Adapter for Philips, side entry holder each 450.00 Add to Cart
55300-5 Specimen Stage Adapter for Hitachi, side entry holders each 450.00 Add to Cart
55300-6 Specimen Stage Adapter for LEO, side entry holders each 450.00 Add to Cart
55300-7 Specimen Stage Adapter for Topcon, side entry holders each 450.00 Add to Cart
55300-8 Specimen Stage Adapter, Blank for customer applications each   Add to Cart
55300-20 Specimen Stage Adapter for Hitachi, top entry holders each 450.00 Add to Cart
55300-21 Specimen Stage Adapter for VG, top entry holders each 450.00 Add to Cart
55300-22 Specimen Stage Adapter for other top entry holders each   Add to Cart
55300-30 Vacuum Storage Container for JEOL, side entry holders (100X) each 550.00 Add to Cart
55300-31 Vacuum Storage Container for JEOL, side entry holders (1210, 1220, 1230, 2010, 2010F, 3010, 3000F, 40100) each 550.00 Add to Cart
55300-32 Vacuum Storage Container for Philips, side entry holders each 550.00 Add to Cart
55300-33 Vacuum Storage Container for Zeiss, side entry holders each 550.00 Add to Cart
55300-34 Vacuum Storage Container for Hitachi, side entry holders each 550.00 Add to Cart
55300-35 Vacuum Storage Container for LEO, side entry holders each 550.00 Add to Cart
55300-36 Vacuum Storage Container for Topcon, side entry holders each 550.00 Add to Cart
55300-40 Port Plug for JEOL Specimen Stage Adapter (100X) each 200.00 Add to Cart
55300-41 Port Plug for JEOL Specimen Stage Adapter (1210, 1220, 1230, 2010, 2010F, 3010, 3000F, 40100) each 200.00 Add to Cart
55300-42 Port Plug for Philips Specimen Stage Adapter each 200.00 Add to Cart
55300-43 Port Plug for Zeiss Specimen Stage Adapter each 200.00 Add to Cart
55300-44 Port Plug for Hitachi Specimen Stage Adapter each 200.00 Add to Cart
55300-45 Port Plug for LEO Specimen Stage Adapter each 200.00 Add to Cart
55300-46 Port Plug for Topcon Specimen Stage Adapter each 200.00 Add to Cart
55300-50 Chamber Gasket (2 required per unit) each 50.00 Add to Cart
55300-51 Vacuum Pumping Station, 4 Station each 5,000.00 Add to Cart

Plasma Etcherarrow12Plasma Etcher – Model PE 2000

The PE 2000 RF Plasma Etcher is specifically designed for reactive gas plasma etching and surface treatments. The unit is capable of 150 watts RF forward power at 13.56 MHz and up to four gas processing. The system is ideal for R&D applications where single sample processing is needed and total control of each process parameter is necessary.

Processes such as photoresist strips, BPSG removal, oxide and nitride layer etch, surface treatment of plastics and plasma cleaning are typical applications. Samples up to 6" diameter as well as irregular shaped substrates can be accommodated in the 200mm diameter vacuum chamber. A fully manual control system coupled with digital readouts and integral matching network with switching type power generator offer a wide range of experimental etch parameters

Special Features

  • High etch rates at moderate power levels of 100 watts forward power can be achieved - 200 Å/minute for oxide and 500Å/minute for nitride.
  • Stainless steel gas system with three-position feed provides maximum etch uniformity and the best possible utilization of the reactive species. Includes a separate vent to atmosphere line.
  • Gas lines, fittings and stage assembly are all stainless steel construction and designed for corrosive applications – A Fomblin charged corrosive series rotary vane pump is included.
  • Safety interlocks prevent mis-operation thereby protecting the user and the system.
  • Manual controls, with digital readouts, make it possible to process in a wide range of vacuum pressure levels using an unlimited combination of reactive species including oxygen, fluorine and chlorine.
  • System is supplied with two manual gas channels, but up to four mass flow channels can be added.


Vacuum Pump: 431/min two stage direct drive corrosive series pump. System base pressure 20 millitorr; Typical operating pressure 50-200 millitorr
Vacuum Readout: Capacitance manometer with digital front panel display in millitorr
Vacuum Chamber: Quartz, 8" OD x 4" high
RF Power: User variable 0-150 watt; 13.56 MHz frequency; manual tune; air cooled; solid state design
Process Timer: Auto-termination of etch up to 99:99:59
Input Power: 115/230 VA, 50/60 Hz, 10/5 amps
Dimensions: 20.25" W x 16" D x 15" H
System Vent: Independent interlocked solenoid with connection for dry nitrogen
Gas Delivery: Two channels independently controlled with precision needle valves and positive off solenoid valves. Normally closed solenoids eliminate any gas flow in the event of a power loss
Gas Control: Dual independent needle valves with safety interlocked solenoid
Sample Table: 6" diameter stainless steel
RF Readouts: Digital front panel LCD meters for forward and reflected power
DC Bias: Digital/front panel LCD meter
System Weight: 60 pounds (without rotary pump)
Warranty: 1 year on parts and labor
Options: Stainless steel chamber with view ports; Mass Flow Controller System up to four channels; Cold Cathode Gauge


55310 Plasma Etcher- Model PE 2000 each 43,995.00 Add to Cart

Spare Parts and Accessories for PE 2000

55312-03 Stainless Steel Chamber with Viewport each 5,100.00 Add to Cart
55310-2 Chamber Gasket (2 required per unit) each 60.00 Add to Cart

Training ManualReactive Ion Etcherarrow12Reactive Ion Etcher – Model RIE 2000

The Reactive Ion Etcher (RIE) is a table-top plasma chemistry reactor designed to provide anisotropic etch plasma technology at a moderate cost. This simple-to-operate instrument can perform repeatable plasma chemical reactions with a minimum of automation. All controls are manually entered into and monitored by a touch-screen interfaced control system which is equipped with automatic monitors and interlock controls to protect the equipment and the samples in the reactor. The RIE requires cooling of the stage. A simple water recirculator is typically sufficient for this task. A small water chiller option is also available for this system. Vacuum is supplied by an integrated turbo pump.

Introduction to Anisotropic Etching

Wet etching of samples is not only dangerous, in many cases it causes undercutting due to the isotropy of the etch. The Reactive Ion Etcher (RIE) uses dry etching to create an anisotropic etch - meaning that the etch is uni-directional. For laboratory applications, the typical plasma etcher has a "barrel" design, or in other words, a cylindrical or barrel geometry to the reaction chamber. One feature of this design is that any point on the surface to be etched can be approached with equal probability from all directions, leading to an etch that is described as being "isotropic". For most if not many applications generally, an isotropic design is probably the design of choice. But in some instances, such as the removal of a passivization layer from an electronic device, isotropic etching always results in undercutting, and when the lines are below a certain point in width, such processing completely undercuts the lines leading to the layers literally falling off. But because for a "barrel" design, one can achieve respectable etch rates at relatively low power, the systems can be built and sold at lower prices.

Typical Applications

  • Final package removal
  • Glass passivation layer removal
  • Deep etching
  • Removal of contaminants

RIE System Specifications

  • Table top design
  • LED touch screen for ease of use
  • Small footprint: 15" L X 21" W X14" H
  • 13.56 MHz RF Plasma
  • 110/240VAC, 50/60Hz
  • 10 to 200 Watts continuous power
  • Dual gas input
  • Manual gas and pressure control
  • Process timer for reproducible runs
  • Shielded Quartz chamber
  • Chamber size 10", 8" sample stage
  • Works with O2, CF4, Ar and other gasses
  • Complete with Turbo System and controller
  • 75 lbs

System Includes

  • Reactive Ion Etcher
  • Quartz Chamber
  • Vacuum hose

The system does include a simple water circulator. We would recommend that a small water chiller be used which will provide a reliable flow of cool water.

Note: Item 55320 has been replaced by items 55320-01, 55320-02, 55320-03 and 55320-04.

Chillerarrow12Solid State Cooling Systems Chiller

The UC170 Chiller by Solid State Cooling Systems will give precise temperature control and respond instantly to any load changes holding to ± 0.1°C, even near ambient temperature. It is highly energy efficient, only using power as needed. This unit will fit with ease on your tabletop or inside your equipment, as it is the world's smallest air-cooled recirculating chiller.

Operating Range 2°C to 45°C (160W / 180W models)
10°C to 45°C (170W / 190W models)
Ambient Temperature 10°C to 40°C non-condensing
Repeatability ± 0.1°C (even near ambient)
Cooling Capacity 160W to 190W @ 20°C (20°C ambient)
Noise (at 1 meter) <63 dBA
Coolant/Process Fluid Koolance (27% propylene glycol/water mix) or 27-50% ethylene glycol/water mix
Process Fluid Fittings ⅛" female CPC with shut-off valve
Pump Magnetically-coupled gear pump with brushless DC motor
Tank Volume 75 ml with level sensor (optional sealable cap)
Wetted Materials Al and polymers, or Cu and polymers
Size (L x W x H) 7.5 x 5 x 7" (19 x 13 x 18 cm)
Weight 8 lbs (3.5 kg)
Power Input Universal: 100 - 240 VAC, 50/60 Hz, 2.8A max
Power Consumption Less than 200 Watts
Operating Voltage 13.5 VDC, 15 amps max (universal input, laptop style power supply included)
Communications Keypad or RS232 interface
Alarms Temperature, fluid level, component or system failure (display, RS232 and dry contact)


55320-01 Reactive Ion Etcher- Model RIE 2000 110 Volt (no pump, no recirculator) each 33,660.00 Add to Cart
55320-02 Reactive Ion Etcher- Model RIE 2000 220 Volt (no pump, no recirculator) each 33,660.00 Add to Cart
55320-03 Reactive Ion Etcher- Model RIE 2000 110 Volt with Turbo Pump (no recirculator) each 43,860.00 Add to Cart
55320-04 Reactive Ion Etcher- Model RIE 2000 220 Volt with Turbo Pump (no recirculator) each 43,860.00 Add to Cart
55320-05 Solid State Cooling Systems Chiller each 3,600.00 Add to Cart

Ion Beam Sputter Deposition and Etching Systemarrow12Ion Beam Sputter Deposition and Etching System Model IBS/e

The Model IBS/e is a high vacuum thin film deposition system designed to precisely deposit sub-nanometer grain, conductive coatings onto specimens prior to examination in the electron microscope. Thin, conductive films are deposited onto specimens to prevent charging effects and to enhance contrast. Thin films are deposited using two ion beam sources directed at a target material, eliminating radiation or heating effects common with other coating techniques. Extremely thin, continuous metal or carbon films are deposited without risking damage to delicate features present on the specimen. Virtually any target material can be used for ion beam deposition with precise control over the deposition thickness. An optional third ion source allows specialized ion beam etching techniques to be employed. The ability to deposit amorphous, continuous films makes the IBS/e system ideal for high resolution electron microscopy techniques.


Specimens examined in high resolution electron microscopes utilizing field emission electron sources demand fine grain, ultra-thin conductive coatings for image capture and specimen analysis. Low voltage SEM specimens must frequently be coated with a conducting film to reduce charging and enhance contrast in images. Ultra-thin films on specimens for examination by both AFM and STM are sometimes needed to decrease surface resistivity, bind small particles to a substrate, and reduce distortion from tip/specimen interaction. All of these techniques require uniform thin films to be deposited on the specimens of interest without heat or radiation. Standard coating techniques such as DC diode, vacuum evaporation, and other thermally driven methods are incapable of handling these requirements. The IBS/e is capable of precisely depositing thin films without exposing specimens to damaging photon flux. Additional applications include producing SEM samples for “channeling contrast”, Electron Back Scatter Diffraction (EBSD) Patterns, Orientation Imaging Microscope (OIM) and multilayer deposition for research and development applications. Reactive etching and deposition can be achieved by introducing reactive gas such as oxygen or nitrogen through an optional micro-mixing valve.

Ion Sources

The IBS/e ion sources are specifically designed for simple operation and fast servicing. Both sources are directed at a target material which is sputtered with ejection energies of < 40 eV onto the specimen. Operating at 10 kV, the ion sources produce a beam flux of 15mA/cm2 to produce a uniform distribution over the entire specimen. Ion beam current is displayed digitally for quick evaluation of the operating conditions. The sources are easily dismounted through the vacuum chamber door. 24 hour factory Quick Exchange Service is available for the anode assemblies.

An etching ion source is optional for nano-matching samples prior to sputter deposition. Etching improves image contrast on highly polished cross section SEM samples and can expose interesting aspects of various types of biological samples.

Specimen Stage Control

The Independent Rotate and Tilt Stage (IRT) drives specimens under the sputtered material with a wide range of parameters. Both the tilt and rotate axes are independently controlled to uniformly coat specimens. The IRT allows directional or rotary shadowing at fixed angles as well as variable speed controls for both tilt and rotation. The variable tilt angle rate improves uniformity by decreasing the tilt rate as the tilt angle increases. Specimens can be parked at 180° to shield them during target oxide removal.

The standard specimen stage can accommodate 2" wafers as well as SEM mounts and TEM specimens. Using the Large Area Stage (LAS) accommodates specimen wafers up to 4" diameter for ion beam sputter deposition.

High Vacuum System

The Model IBS/e creates a clean, hydrocarbon free, high vacuum automatically using a turbomolecular pump. Vacuum level is displayed digitally using a cold cathode high vacuum gauge. The system reaches a base pressure of 10-7 torr within minutes, allowing oxide-free metal films to be deposited with the need for liquid nitrogen trapping.

Film Thickness Monitor

Monitoring the film thickness precisely is done with a quartz crystal thickness monitor (QCTM). The QTCM will precisely monitor and repeatably terminate the sputtering process at preset film thickness or present time, whichever occurs first.


Four different target materials are selectable for deposition without breaking vacuum. Each target can be rotated into the sputter position simply by rotating a thumbwheel. The ability of the IBS/e to produce oxide free coatings without liquid nitrogen trapping allow refractory metals such as chromium, tungsten, and tantalum to be deposited without problems.

Typical Target Materials

  • Chromium
  • Tungsten
  • Tantalum
  • Platinum
  • Iridium
  • Carbon
  • Gold
  • Gold/Palladium
  • Palladium
  • Silver


Vacuum System

Roughing Pump: 40 I/m N2
Turbo Pump: 250 I/s/ N2
Base Pressure: 10-7 torr
Operating Pressure: x 10-5 torr (10 to 15 minutes)
Vacuum Gauge: Cold cathode

Ion Sources

Beam Energy: 2.5kV to 10 kV
Beam Flux: 15mA/cm2

IRT Stage

Tilt Range - Deposition Mode: 0 to +/- 99°
Tilt Range - Etch Mode: 0 to +/- 99°
Tilt Range - With Large Area Stage: 0 to +/- 17 °
Specimen Stage: 2" Standard; 4" Optional
Tilt Angle Rate: Variable
Rotational Speed: 0 to 40 RPM


Source Gas: Ar, 99.999% pure
Pressure: 2 sccm @ 5-7 PSI
Vent Gas: N2 @ 5 PSI


110 VAC / 15 A 50/60 Hz
220 VAC / 7.5 A 50/60 Hz


Please specify VOLTAGE option when ordering (120 or 240 VAC)

55330 Ion Beam Sputter Deposition and Etching System Model BS/e each 67500.00 Add to Cart
Spare Parts
55330-01 SI O8 Source Spare Pack (6 sets). Includes: 6 qty. Front Cathodes / 6 qty. Rear Cathodes / 36 qty. Calibrated Ceramic Insulators each 950.00 Add to Cart
55330-02 Front Shield for SI O8 Ion Source each 425.00 Add to Cart
55330-03 Rear Shield for SI O8 Ion Source each 375.00 Add to Cart
55330-04 Anode for SI O8 Ion Source each 450.00 Add to Cart
55330-05 HV Conductor for SI O8 Ion Source each 99.00 Add to Cart
55330-06 Rear Cathode for SI O8 Ion Source each 38.00 Add to Cart
55330-07 Front Cathode for SI O8 Ion Source each 38.00 Add to Cart
55330-08 IBS Chamber /eIRT O-ring Set each 44.00 Add to Cart
55330-09 SI O8 Source Alignment Tool each 275.00 Add to Cart
55330-10 Calibrated Ceramic Insulator (6 qty.) each 90.00 Add to Cart
55330-11 RP Mist Eliminator Cartridge each 72.00 Add to Cart
55330-12 High Voltage Cable (for model IBS TM200) each 250.00 Add to Cart
55330-13 Target Blanks (Al) each 32.00 Add to Cart
Spare Parts and Accessories for IBS/e
55332-01 Etching Ion Source (mounted in IBS/e when purchased) each 6200.00 Add to Cart
55332-02 Replacement Source Anode Assembly each 2895.00 Add to Cart
55332-03 Large Area Stage, 4” (1000mm) each 850.00 Add to Cart
55332-Ar Ar Regulator each 625.00 Add to Cart
55332-N2 N2 Regulator each 625.00 Add to Cart
Specimen Carriers
55332-10 Standard, 1.25” diameter platform carrier each 150.00 Add to Cart
55332-11 Standard, 2” diameter platform carrier each 200.00 Add to Cart
55332-12 1⁄8” diameter pin, 1.25” diameter each 200.00 Add to Cart
55332-14 3 position, 12mm stub diameter, 1.25” diameter each 160.00 Add to Cart
55332-15 Stub for Hitachi FESEM Specimen Mount each 92.00 Add to Cart
55332-16 Flat Pinch Specimen Carrier, 1.25” diameter each 299.00 Add to Cart
55332-30 Potassium Bromide Scintillator (for beam observation) each 90.00 Add to Cart
55332-31 2Gold, 0.008” foil each 775.00 Add to Cart
55332-32 Platinum, 0.020” foil each 700.00 Add to Cart
55332-33 2Palladium, 0.020” foil each 700.00 Add to Cart
55332-34 2Gold/Palladium, 0,020” foil each 725.00 Add to Cart
55332-35 Carbon, 0.125” each 105.00 Add to Cart
55332-36 Tantalum, 0.125” each 225.00 Add to Cart
55332-37 Tungsten, 0.125” each 225.00 Add to Cart
55332-38 Chromium, 0.125” each 150.00 Add to Cart
55332-39 Iridium, 0.020” each 350.00 Add to Cart
55332-40 2Silver, 0.020 foil each 200.00 Add to Cart
55332-41 Nickel, 0.125” each 175.00 Add to Cart

2 Not recommended for high resolution imaging All others suggested for magnification < 200k

Retrofit Options
55332-50 Quartz Crystal Thickness Monitor each 5850.00 Add to Cart
55332-51 SI 08 Ion Source (SI08 Ion Source retrofits to a second sputtering or etching port. Needle Valve, connecting Ar tube and SHV high voltage cable included) each 6100.00 Add to Cart
55332-52 SI O8 Ion Source Mating Flange each 205.00 Add to Cart
55332-53 E IRT Stage for IBS/e each 4650.00 Add to Cart
55332-54 E IRT Stage Controller for IBS/e each 2450.00 Add to Cart

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